Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications

MOCVD growth of GaN-based high electron mobility transistor structures

Decoding the mechanism of the mechanical transfer of a GaN-based heterostructure via an h-BN release layer in a device configuration

Articles you may be interested in Single crystalline Sc 2 O 3 / Y 2 O 3 heterostructures as novel engineered buffer approach for GaN integration on Si (111) Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

In this study, we report on a demonstration of hydrogen sensing at low temperature using SnO2 functionalized AlGaN/GaN high electron mobility transistors (HEMT). The SnO2 dispersion was synthesized via a hydrothermal method and selectively deposited on the gate region of a HEMT device through a photolithography process. The high electron sheet carrier concentration of nitride HEMTs provides an ...

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...