Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications
نویسندگان
چکیده
منابع مشابه
Decoding the mechanism of the mechanical transfer of a GaN-based heterostructure via an h-BN release layer in a device configuration
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2006
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.2221520